Cu cone inserted CBRAM device fabrication and its improved switching reliability induced by field concentration effect

To supplement resistor fail of conduction bridge random access memory (CBRAM), various device fabrication methods have been suggested such as exploiting metal alloy as a cation supply layer or electrode [1]–[2], cation doped electrolyte [3]–[4], and confining cation injection with inserted buffer layer [5]–[6]. In this work, Cu cone structure embedded CBRAM device is suggested for improving switching reliability and uniformity. Along with cone structure fabrication method through wet etching, reliability improvement induced by field concentration is included.