Lasing up to T = 339 K in Subwavelength Nanowire-Induced Photonic Crystal Nanocavities

We report on lasing operation up to 339K in nanocavities constituted of subwavelength ZnO nanowires integrated in SiN photonic crystals. With thresholds as low as 4MW.cm−2, the investigated nanolasers outpeported subwavelength ZnO nanowire lasers operating at high-temperature.