Microcavity effects on the spontaneous emission from InGaAs/GaAs quantum wells

The spontaneous emission from an InGaAs/GaAs single‐quantum well surrounded by AlAs/GaAs distributed Bragg reflectors (DBR) under the near‐resonance condition between the exciton level and the confined optical mode is investigated. Under such conditions, on‐axis spontaneous emission enhancement at the cavity resonant wavelength is clearly identified. The strength and character of the interaction of the exciton with the confined optical mode is determined by the dependence of photoluminescence spectra on the reflectivity of the DBR. Temperature dependence of the enhanced spontaneous emission shows the cavity resonant wavelength shifts at 0.85 A/°C around room temperature. An increase of emission intensity at the cavity resonant wavelength with increasing temperature is also observed, which can be related to the increase of the interaction between excitonic emission and cavity mode.