High-Speed Si/Ge Avalanche Photodiodes with Enhanced Responsivity
2021
Reflectors have been integrated at the end of the Si/Ge waveguide avalanche photodiodes (APDs) to enhance the responsivity without compromising the bandwidth. The responsivity is improved from ∼ 0.75 A/W to ∼ 1 A/W assisted with a distributed Bragg reflector (DBR) or a loop reflector (LR) while maintaining a high bandwidth of 25 GHz. The enhanced responsivity improves the sensitivity by 1-2 dB with 32 Gbit/s NRZ modulation.
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