Temperature dependent luminescence from quantum dot arrays: phonon-assisted line broadening versus carrier escape-induced narrowing

The paper presents a theoretical model describing the temperature dependence of the photoluminescence spectrum of self-ordered quantum dots arrays taking into account exciton-phonon interaction and thermal carriers transfer. This model is applied to the photoluminescence behaviour of InAs quantum dots grown on GaAs vicinal substrates. It allows distinguishing between effects caused by the different temperature-induced mechanisms and thus provides information about the physical and electronic structure of the quantum dot arrays.