Annealing Effect on the Contact Angle, Surface Energy, Electric Property, and Nanomechanical Characteristics of Co40Fe40W20 Thin Films

2021 
This study investigated Co40Fe40W20 single-layer thin films according to their corresponding structure, grain size, contact angle, and surface energy characteristics. Co40Fe40W20 alloy thin films of different thicknesses, ranging from 10 to 50 nm, were sputtered on Si(100) substrates by DC magnetron sputtering. The thin films were annealed under three conditions: as-deposited, 250 °C, and 350 °C temperatures, respectively. The Scherrer equation was applied to calculate the grain size of Co40Fe40W20 thin films. The results show that the grain size of CoFe(110) increased simultaneously with the increase of post-annealing temperature, suggesting that the crystallinity of Co40Fe40W20 thin films increased with the post-annealing temperature. Moreover, the contact angles of all Co40Fe40W20 thin films were all less than 90°, suggesting that Co40Fe40W20 thin films show changes in the direction of higher hydrophilicity. However, we found that their contact angles decreased as the grain size of CoFe increased. Finally, the Young equation was applied to calculate the surface energy of Co40Fe40W20 thin films. After post-annealing, the surface energy of Co40Fe40W20 thin films increased with the rising post-annealing temperature. This is the highest value of surface energy observed for 350 °C. In addition, the surface energy increased as the contact angle of Co40Fe40W20 thin films decreased. The high surface energy means stronger adhesion, allowing the formation of multilayer thin films with magnetic tunneling junctions (MTJs). The sheet resistance of the as-deposited and thinner CoFeW films is larger than annealed and thicker CoFeW films. When the thickness is from 10 nm to 50 nm, the hardness and Young’s modulus of the CoFeW film also show a saturation trend.
    • Correction
    • Source
    • Cite
    • Save
    • Machine Reading By IdeaReader
    37
    References
    0
    Citations
    NaN
    KQI
    []