A 0.13μm thin SOI CMOS technology with low-cost SiGe:C HBTs and complementary high-voltage LDMOS

We demonstrate the integration, in 0.13μm thin SOI CMOS technology, of low-cost high-performance high-voltage LDMOS and HBT transistors. These specific devices are obtained, without affecting CMOS core process devices. Static and dynamic characteristics for both type of transistors are presented, showing state of the art devices suitable for RF/analog/digital system on chip integration.