Dielectric spectroscopy of n type Cu5In9Se16 semiconductor compound

Abstract This paper presents the frequency dielectric measurements of the N type ternary semiconductor compound of Cu5In9Se16 in order to analyze the mechanisms of charge transport and dielectric losses. The universal laws of Elliot and Jonscher are used to identify the conduction mechanisms. The experimental data agree with the theoretical models of hopping and polaron tunneling. The values of some parameters related to the dominant conduction mechanisms are estimated.