Microwave assisted spin transfer torque switching in a vertically integrated logic-in-memory architecture

Current information devices will be confronted with a serious physical limit in the lateral downsizing in the future. An alternative approach for continuous progress in the device performance is intensively demanded. An integration of multi functionality, such as memory and logic components, is a promising solution for an increasing requirement in various system applications [1,2]. In the present study, an exchange coupled multilayer stack, was proposed as a quarterly state logic-in-memory structure, and fundamental device operations have been numerically demonstrated with micromagnetic simulations.