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Novel SiO/sub 2/AlN/HfAlO/IrO/sub 2/ memory with fast erase, large ΔV/sub TH/ and good retention
Novel SiO/sub 2/AlN/HfAlO/IrO/sub 2/ memory with fast erase, large ΔV/sub TH/ and good retention
2005
C. H. Lai
A China
K C Chiang
W. J. Yoo
C.-F. Cheng
S. P. Mcalister
C. C. Chi
P Wu
Keywords:
Engineering
Electronic engineering
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