A 20mohmcm2 600V-class Superjunction MOSFET

Superjunction (SJ) MOSFETs with extremely low on-resistance and high avalanche withstanding capability have been designed and experimentally demonstrated. The p- and n-columns for the SJ structure are designed to reduce the on-resistance and to maximize both the breakdown voltage and the avalanche withstanding capability. The demonstrated SJ-MOSFET realized the lowest on-resistance of 20∼mΩcm 2 among previously reported 600 V-class SJ-MOSFETs. The device also withstands high avalanche current of 185∼A/cm 2 .