A Low Input Capacitance p-GaN Gate HEMT with Split Source-Field-Plate for Low Switching Loss

In this paper, a low input capacitance $(C_{\mathrm{ISS}})$ p-GaN gate HEMT with the split source-field-plate (SS-HEMT) is proposed for realizing low switching loss performance. During switching processes, the SS-HEMT features low switching loss owing to the $C_{\mathrm{ISS}}$ is significantly reduced. Compared with the conventional HEMT (C-HEMT), the proposed SS-HEMT has a 47% lower $C_{\mathrm{ISS}}$ , resulting in a 15% lower switching loss of the device. Supported by the simulation, the SS-HEMT can be a competitive candidate for low switching loss power applications.