TFT with ultra-low temperature poly-silicon technology for flexible liquid crystal display

Low temperature poly silicon technology with a temperature of 400℃ was developed and discussed for the application of flexible liquid crystal display (LCD). By optimizing the doping and activation processes, the TFT device with a mobility of 80 cm 2 /V•s was fabricated successfully. Also we studied the mechanism of doping and activation at 400℃, and found out that the upper limit of implanted dosage and electrical activation rate were 2 × 10 14 ions/cm 2 and 20%, respectively.