A method for reducing the wettability of bonding material to Eckberührungsflächen and a device manufactured according to the method

A method of forming an interconnect structure which comprises forming a recess in a dielectric layer of a substrate. A first transition metal layer is formed in the recess at corner portions of the recess. A second transition metal layer is formed in the recess over the first transition metal layer to coat the well. The recess is filled with a filling layer. The substrate is annealed. The first transition metal layer and the second transition metal layer form an alloy region adjacent to the corner portions during annealing. The alloy region has a reduced wettability for a Fullschichtmaterial as the second transition metal. The substrate is polished to remove portions of the filler layer, extending across the recess. An apparatus in accordance with the method includes an alloy of a first and second transition metal, which is arranged at the corner portion.