Continuous-wave operation of 1.27-/spl mu/m GaAsSb/GaAs VCSELs

1.27-/spl mu/m VCSELs using GaAsSb quantum wells, which operate continuous-wave at and above room temperature (RT), are reported. A threshold current as low as 0.7 mA at RT and a maximum cw operating temperature of 70/spl deg/C are demonstrated. This result was achieved by optimizing the active-layer structure with respect to strain. Thus, GaAsSb VCSELs are viable low-cost light sources for high-bandwidth fiber communications.