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Direct source-drain tunneling current in subthreshold region of sub-10-nm gate EJ-MOSFETs
Direct source-drain tunneling current in subthreshold region of sub-10-nm gate EJ-MOSFETs
1999
H. Kawaura
Keywords:
Subthreshold slope
Electronic engineering
Time-dependent gate oxide breakdown
Subthreshold conduction
Quantum tunnelling
Materials science
Optoelectronics
tunneling current
Correction
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