A Surface-Potential-Based Non-Charge-Sheet Core Model for Fully Depleted SOI MOSFET

This paper presents a surface-potential-based non-charge-sheet core model for long-channel fully depleted SOI MOSFET. The formulation starts from a physics-based solution of the surface potential and an analytical non-charge-sheet drain current is provided to describe the fully-depleted SOI MOSFET behavior with the coupling between the front and back interfaces. The model calculation is compared with the numerical simulations, and exact agreement between them is observed for different geometry structures.