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HEMT In0.52Al0.48As/In0.53Ga0.47As double-grille de longueur 100nm
HEMT In0.52Al0.48As/In0.53Ga0.47As double-grille de longueur 100nm
2005
N. Wichmann
I. Duszynski
Sylvain Bollaert
Xavier Wallart
Alain Cappy
Keywords:
Materials science
Optoelectronics
High-electron-mobility transistor
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