Evaluation of thin-oxide Z 2 -FET DRAM cell

Advanced 28 nm node FDSOI Z 2 -FETs with thin top-gate insulator are characterized as capacitor-less DRAM cells. Results demonstrate effective Z 2 -FET memory behavior for narrow devices (below 1 μm). As compared with thicker gate oxide Z 2 -FETs, thinning the insulator yields lower performance in terms of retention, variability and stability of the logic states during holding.