Millisecond processing beyondchiptechnology: Fromelectronics tophotonics

There isaclear andincreasing interest inshort timeannealing processing farbelowonesecond, i.e. thelower limit ofRapid Thermal Processing (RTP)called spike annealing. Thiswasdriven bytheneedofsuppressing theso-called Transient Enhanced Diffusion inadvanced boronimplanted shallow pn-junctions insilicon technology. Meanwhile theinterest inflash lamp annealing (FLA)inthemillisecond rangespread outintoother fields related tosilicon technology andbeyond. Thispaper reports onrecent experiments regarding shallow junction engineering ingermanium, annealing ofITOlayers onglass andplastic foil toforman conductive layer aswellasinvestigations which wedidduring thelast years inthefield ofwide bandgapsemiconductor materials (SiC, ZnO). A morecommonfeature evolving fromourwork wasrelated tothemodeling ofwafer stress during millisecond thermal processing withflash lamps. Finally recent achievements inthefield ofsilicon-based light emission basing onMetalOxide-Semiconductor Light Emitting Devices will bereported.