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Improvement of Switching Characteristics for TiO2 Based RRAM Cell
Improvement of Switching Characteristics for TiO2 Based RRAM Cell
2013
Yu-Chih Huang
Huan-Min Lin
Hung-Hsien Li
Chia-Tsung Chang
Wan-Lin Tsai
Huang-Chung Cheng
Keywords:
Resistive random-access memory
Materials science
Electronic engineering
Optoelectronics
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