X-RAY ANALYSIS OF THE INFLUENCE OF SUBSTRATE TEMPERATURE ON THE CRYSTALLINE STRUCTURE OF ZnO THIN FILMS GROW BY RF MAGNETRON SPUTTERING

ZnO thin films were prepared on Si (100) substrates by RF sputtering. The crystalline property of the films were observed to vary with the substrate temperature used. X-ray diffraction (XRD) measurement showed that the substrate temperature ZnO films exhibited preferred c-axis oriented (002) of below 0.32° full width at half maximum of X-ray rocking curves, an extremely high resistivity of 10 10 Ω.cm and an energy gap of 3.3 eV at room temperature. It was found that a substrate temperature of 100°C and target/substrate distance about 50 mm, very low gas pressures of 3.35x10 -3 Torr in argon and oxygen mixed gas atmosphere giving to ZnO thin films a good homogeneity and a high crystallinity.