Electrical stressing of bilayer insulator HfO 2 /Al 2 O 3 metal-insulator-insulator-metal (MIIM) diodes

Bilayer metal/insulator/insulator/metal (MIIM) diodes of HfO 2 and Al 2 O 3 using asymmetric metal gates are investigated for their susceptibility to trap charge. Comparing the effects of constant current electrical stressing for varying thicknesses of insulators, the authors have formulated an adaptation of the Fowler-Nordheim derivative method such that an estimate of the charge centroid location can be obtained for bilayer insulators. In this work it has been found the addition of an HfO 2 layer into an Al 2 O 3 MIM device leads to increased charge trapping and greater shifts in the I-V characteristic.