Layered HfSiON-based tunnel stacks for voltage reduction and improved reliability in TANOS memories

In this work we present the integration of Band Engineered TANOS-like memories using HfSiON in the tunnel stack to boost the programming efficiency and improve cycling. An accurate correlation analysis between the gate-stack material physical properties and the memory performances is presented. In particular, the importance of the nitridation step of HfSiON on the memory retention characteristics at high temperature is suggested.