Digitally aligned ZnO nanowire array based synaptic transistors with intrinsically controlled plasticity for short-term computation and long-term memory.

Digitally aligned long continuous ZnO NWs with distinct width and microstructures are fabricated and used for tuning plasticity of synaptic transistors (STs) for the first time. Intrinsically controlled synaptic plasticity, i.e. short-term plasticity (STP) and long-term plasticity (LTP), were achieved using the same source material and post-fabrication condition for the first time, which is essential for simple and low-cost fabrication. Moreover, these versatile properties of ZnO STs enable the integration of STP and LTP as realized by multiplexed neurotransmission of different neurotransmitters: dopamine and acetylcholine, which promote learning and memory in organisms, so the device may enable these processes in neuroelectronic devices. Devices with well-controlled synaptic plasticity can simulate the “learning - forgetting - erase” and “instant display” processes. ZnO NW may enable development of neuromorphic computers that can use the same material to achieve both short-term computation and long-term memory.