Dynamics of tunneling into charge-tunable Si quantum dots

Abstract Using frequency-dependent admittance spectroscopy, the dynamics characteristics of tunneling into charge-tunable silicon quantum dots (Si-QDs) with a SiO 2 /Si- QDs/SiO 2 /Si-substrate structure are investigated. Two resonance peaks, both for capacitance and conductance in the inversion region, are observed at room temperature, being attributed to the direct tunneling between the conductance band of Si-substrate and the lowest two electronic state levels of the Si-QD. Moreover, the Coulomb charging energy of the dots is extracted from the experimental results.