Nanowire field-effect transistor with Bi(1.5)Zn(1.0)Nb(1.5)O(7) dielectric

In this letter, amorphous Bi(1.5)Zn(1.0)Nb(1.5)O(7) films with large permittivity (similar to 70) are prepared as the gate dielectric for ZnO nanowire field-effect transistors by using low-temperature (similar to 100 degrees C) pulsed laser deposition. The transistors exhibit a low operation gate voltage (< 3 V), a high carrier mobility (similar to 42 cm(2)/V s), and a steep subthreshold swing up to 240 mV/decade. These results combined with near-room-temperature processing technique suggest that the nanowire transistor with Bi(1.5)Zn(1.0)Nb(1.5)O(7) dielectric is a promising candidate for high-performance flexible electronics.