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Electrical Properties of 2D Si$_{\mathrm{1-x}}$Ge$_{\mathrm{x}}$ alloys by ultra-fast thermal annealing
Electrical Properties of 2D Si$_{\mathrm{1-x}}$Ge$_{\mathrm{x}}$ alloys by ultra-fast thermal annealing
2017
C. H. Lee
Q Y Chen
P.V. Wadekar
W. C. Hsieh
C. F. Chang
H.C. Huang
C.M. Shiau
Y S Hong
Y.-P. Cheng
C.Y. Dang
P C Kung
Y. Y. Liang
S.H. Huang
Z.Y. Wu
C-M. Lin
S.T. Yu
L.W. Tu
N. J. Ho
H.W. Seo
W.K. Chu
Keywords:
Nuclear magnetic resonance
Annealing (metallurgy)
Materials science
Optoelectronics
ultra fast
Correction
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