Formation of Ferroelectric Y-doped HfO2 though Atomic Layer Deposition and Low Temperature Post Annealing

The impact of annealing temperature and the duration on the dielectric properties of atomic-layer-deposited (ALD) 5 mol% Y-doped HfO 2 capacitors have been examined. Besides the ferroelectric behavior of the capacitor over an annealing temperature of $500^{\circ}\mathrm{C}$ for short period, the appearance of ferroelectricity has been obtained at $400^{\circ}\mathrm{C}$ when annealed over 5 min. A fairly nice ferroelectric property with a remanent polarization P r of 12 $\mu$/cm2 after wake-up process has been obtained.