Controlling Resistive Switching by Using an Optimized MoS2 Interfacial Layer and the Role of Top Electrodes on Ascorbic Acid Sensing in TaOx-Based RRAM

Controlled resistive switching by using an optimized 2 nm thick MoS2 interfacial layer and the role of top electrodes (TEs) on ascorbic acid (AA) sensing in a TaOx-based resistive random access memory (RRAM) platform have been investigated for the first time. Both the high-resolution transmission electron microscopy (HRTEM) image and depth profile from energy dispersive X-ray spectroscopy confirm the presence of each layer in IrOx/Al2O3/TaOx/MoS2/TiN structure. The pristine device including the IrOx TE with the 2 nm thick interfacial layer shows the highest uniform rectifying direct current endurance >1000 cycles and a large rectifying ratio >3.2 × 104, and a high nonlinearity factor >700 is obtained, greater than that of Pt and Ru TEs. After formation, this IrOx device produces bipolar resistive switching characteristics and a long program/erase (P/E) endurance >107 cycles at a low operation current of <50 μA with small pulse width of 100 ns. The stressed device shows a reduced Al2O3/TaOx interface from ...