Fabrication technology of metal-cavity nanolasers in III-V membranes on silicon

Electrically pumped metal-cavity nanolasers in III-V semiconductors are promising for their application in optical interconnects, where high integration density and low optical powers are required. They offer a low threshold current and excellent cooling properties due to the metal encapsulation. In this contribution, an overview about the technology required for the fabrication of a nanolaser coupled to an InP-membrane waveguide on silicon is presented. A variety of techniques are used including electron-beam lithography, dry and wet etching, as well as deposition of dielectrics and metals. The technological challenges to fabricate such a complex nanostructure are also discussed.