Old Web
English
Sign In
Acemap
>
Paper
>
Anomalous impact-ionization gate current in high breakdown InP-based HEMT's
Anomalous impact-ionization gate current in high breakdown InP-based HEMT's
1996
Meneghesso
Manfredi
Pavesi
Auer
Ellrodt
Prost
Tegude
Canali
Zanoni
Keywords:
High-electron-mobility transistor
Impact ionization
Electric field
Logic gate
Indium gallium arsenide
gate current
Optoelectronics
Indium phosphide
Temperature measurement
Materials science
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]