High‐Power III‐Nitride Emitters for Solid‐State Lighting

High-power, large-area InGaN/GaN quantum-well heterostructure light-emitting diodes based on an inverted, or flip-chip, configuration are described. These devices are mounted in specially designed high-power (1-5 W) packages and exhibit high extraction efficiency and low operating voltage. In the blue wavelength regime, output powers greater than 250 mW (1 x 1 mm 2 device) and 1 W (2 x 2 mm 2 device) are delivered at standard operating current densities (50 A/cm 2 ), corresponding to wall-plug efficiencies of 22%-23%. Employing phosphors for the generation of white light, these same devices achieve luminous efficiencies greater than 30 lm/W.