High-performance and light-emitting n-type organic field-effect transistors based on dithienylbenzothiadiazole and related heterocycles

Novel co-oligomers 1−3 composed of donor−acceptor units were developed as n-type semiconductors for OFETs. They have high electron affinity and the FET device of 1 showed high electron mobility (μe = 0.19 cm2/Vs) and low threshold voltage (VTh = 3V). Moreover, n-type light-emitting FETs (LFETs) were fabricated using 1−3.