ELECTRIC FIELD DOMAINS IN INTENTIONALLY PERTURBED SEMICONDUCTOR SUPERLATTICES

Simulations based on a rate equation model for high‐field transport through a doped semiconductor superlattice are presented for the case that one barrier is chosen significantly wider than the others. The distinct impact of that local perturbation on the overall shape of the current–voltage characteristic is discussed and related to the spatial field distribution. The measured current–voltage characteristic of a superlattice, which was intentionally grown with one thicker barrier, confirms the strong asymmetry predicted by the model calculations.