Ultraviolet Stimulated Emission in AlGaN Layers Grown on Sapphire Substrates using Ammonia and Plasma‐Assisted Molecular Beam Epitaxy

M. V. Rzheutski,Evgenii V. Lutsenko,A. G. Vainilovich,Illia E. Svitsiankou,Aliaksei V. Nahorny,Gennadii P. Yablonskii,Vitaly Z. Zubialevich,S. I. Petrov,A.N. Alexeev,D. V. Nechaev,V. N. Jmerik

Ultraviolet Stimulated Emission in AlGaN Layers Grown on Sapphire Substrates using Ammonia and Plasma‐Assisted Molecular Beam Epitaxy

2020

M. V. Rzheutski
Evgenii V. Lutsenko
A. G. Vainilovich
Illia E. Svitsiankou
Aliaksei V. Nahorny
Gennadii P. Yablonskii
Vitaly Z. Zubialevich
S. I. Petrov
A.N. Alexeev
D. V. Nechaev
V. N. Jmerik

National Academy of Sciences of Belarus (State Programs of Scientific Research of Belarus “Photonics, opto- and microelectronics” 2.1.01; 2.1.04); Russian Science Foundation (Grant #19-72-30040)

Keywords:

Optoelectronics
Stimulated emission
Molecular beam epitaxy
Ultraviolet
Physics
Sapphire
Condensed matter physics
Ammonia
Plasma
Microelectronics
Photonics

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