Growth and characterization of Gd_2O_3 thin film on Si

Gd2O3 thin films were deposited on Si(100) substrates by pulsed laser deposition(PLD).The structure,composition and band offset were investigated by X-ray diffraction(XRD),X-ray reflectivity(XRR),X-ray photoelectron spectroscopy(XPS) and ultraviolet photoemission spectroscopy(UPS).The results show that,the Gd2O3 thin film is amorphous when growing at 300 ℃ and is crystallized into monoclinic structure at 650 ℃.The formation of Gd-silicate interfacial layer due to interface reaction is confirmed by XRR and XPS.The valence band offset(ΔEV) of(-2.28±0.1)eV is obtained by XPS.