Investigation of electrostatic body control in accumulated body MOSFETs

The authors previously reported wide-range threshold voltage (V T ) control and improvement in subthreshold slope (SS) and drain induced barrier lowering (DIBL) in narrow bulk Si Accumulated Body MOSFETs [1-3]. The side-gate structure surrounding the MOSFET body is used for accumulating the body through an independent contact to provide these effects (Fig. 1). In this work, we present a study on the electrostatic body control attained by the side-gates, using experimental and simulated devices.