Synergy of non-ionizing and ionizing processes in the reliability degradation of Power MOSFETs oxide

M. Naceur,Antoine Touboul,Michael Gedion,Jean-Roch Vaillé,Frédéric Wrobel,E. Lorfevre,F. Bezerra,G. Chaumont,Frédéric Saigné

Synergy of non-ionizing and ionizing processes in the reliability degradation of Power MOSFETs oxide

2011

M. Naceur
Antoine Touboul
Michael Gedion
Jean-Roch Vaillé
Frédéric Wrobel
E. Lorfevre
F. Bezerra
G. Chaumont
Frédéric Saigné

Charge to breakdown reduction after electric stress is observed after heavy ion irradiation at two energies exhibiting a similar LET value. An enhanced degradation of the oxide layer reliability is observed at low energy.

Keywords:

Physics
Optoelectronics
Oxide
Ionizing radiation
Time-dependent gate oxide breakdown
Irradiation
Radiation effect
Electronic engineering
Ion
Power MOSFET
Non-ionizing radiation
low energy
charge to breakdown
Degradation (geology)

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