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Structure analysis of Si/Si 1-x C x /Si(001) formed using ion implantation strain relaxation method
Structure analysis of Si/Si 1-x C x /Si(001) formed using ion implantation strain relaxation method
2016
Taiyo Murakami
Keisuke Arimoto
Jyunji Yamanaka
Kosuke O. Hara
Chiaya Yamamoto
Noritaka Usami
Yusuke Hoshi
You Arisawa
Kentarou Sawano
Kiyokazu Nakagawa
Keywords:
Nuclear magnetic resonance
Ion implantation
Relaxation (iterative method)
Semiconductor
Chemistry
Strain (chemistry)
Analytical chemistry
structure analysis
Materials science
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