0.78- and 0.98-/spl mu/m ridge-waveguide lasers buried with AlGaAs confinement layer selectively grown by chloride-assisted MOCVD

The 0.78- and 0.98-/spl mu/m buried-ridge AlGaAs laser diodes (LD's) with a high Al-content AlGaAs confinement layer selectively grown by using a Cl-assisted MOCVD are demonstrated. By employing the AlGaAs confinement layer, the threshold current and the slope efficiency of the 0.78-/spl mu/m LD are improved by /spl sim/40%, compared to those of the conventional loss-guided LD with the GaAs confinement layer. In addition, the stable fundamental mode up to 150 mW and the small astigmatic distance less than 1 /spl mu/m are obtained. The 0.78-/spl mu/m LD also shows the excellent high-power and high-temperature characteristic such as 100 mW CW operation at 100/spl deg/C and the reliable 2,000-hour operation under the condition of 60/spl deg/C and 55 mW. In the 0.98-/spl mu/m LD, the narrow beam with the low aspect ratio of 1.86 and the stable fundamental transverse mode over 200 mW are exhibited. As a result, the 0.98-/spl mu/m LD realizes the high fiber-coupled-power of 148 mW. Moreover, the high-power and high-temperature operation of 150 mW at 90/spl deg/C is obtained. In the preliminary aging test, the LD's have been stably operating for over 900 hours under the condition of 50/spl deg/C and 100 mW. >