Improved memristive switching of graphite/Nb:SrTiO 3 interfaces by tuning Fermi levels and dielectric constants

Layered electrodes based on graphene or transition metal dichalcogenides have enriched the development of nanoelectronics due to their uniqueness in flexibility, transparency, thermal stability, and electronic structure. Here, we report on resistive switching behavior observed in graphite/Nb:SrTiO 3 (Gr/NbSTO) junctions. Straightforward in situ bromine intercalation of graphite modulates the transport properties of Gr/NbSTO devices, an effect which cannot be achieved using traditional metal electrodes. At low temperatures, the strong electric field dependence of the dielectric constant of NbSTO also plays an important role in further enhancing the resistive switching performance. Our findings here suggest that to optimize the performance and to perform more complex functions, tunability of the Fermi level of the layered graphite electrode in combination with the nonlinear dielectric constant of the NbSTO substrate is critically important for interface-type resistive switching devices.