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Materials and Strain Issues in AlGaN/GaN HEMT Degradation
Materials and Strain Issues in AlGaN/GaN HEMT Degradation
2009
E. Muñoz
C. Rivera
F. Gonzalez-Posada
A. Redondo
F. Romero
R. Cuerdo
F. Calle
R. Gago
A. Jimenez
C. Palacio
Keywords:
Analytical chemistry
High-electron-mobility transistor
Materials science
Strain (chemistry)
algan gan
Degradation (geology)
Optoelectronics
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