External Quantum Efficiency of Monolayer MoTe2 based Near-Infrared Light Emitting Diodes

2019 
We demonstrated a monolayer MoTe2 based near-IR light emitting diode on SiO2/Si substrate and determined for the first time the external quantum efficiency of the device in the range of 10−4 ~ 5×10−3 at 5~300K.
    • Correction
    • Source
    • Cite
    • Save
    • Machine Reading By IdeaReader
    7
    References
    1
    Citations
    NaN
    KQI
    []