External Quantum Efficiency of Monolayer MoTe2 based Near-Infrared Light Emitting Diodes
2019
We demonstrated a monolayer MoTe2 based near-IR light emitting diode on SiO2/Si substrate and determined for the first time the external quantum efficiency of the device in the range of 10−4 ~ 5×10−3 at 5~300K.
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