Investigation of Standard and Enclosed Gate n-MOSFET Degradation due to Total Ionizing Dose Using BSIM-BULK

In this work, investigation of standard bulk and enclosed gate (EG) MOSFET due to total ionizing dose (TID) degradation are proposed using BSIM-BULK. Oxide and interface charges are calculated to obtain threshold voltage and leakage (off) current. The effects of both the interface and oxide charges are added in the Verilog-A code of BSIM-BULK. A single model card that covers the characteristics of both the bulk and EG n-MOSFET is created and included in BSIM-BULK to study the impact of TID on degradation of both the devices.