An instrument for precision controlled radiation exposures, charged beam profile measurement, and real-time fluence monitoring beyond 1016 neq/cm2

An instrument has been developed for precision controlled exposures of electronic devices and material samples in particle beams. The instrument provides simultaneously a real time record of the profile of the beam and the fluence received. The system is capable of treating devices with dimensional scales ranging from millimeters to extended objects of cross sections measured in tens of square centimeters. The instrument has been demonstrated to operate effectively in integrated fluences ranging up to a few times 1016 1-MeV-neutron-equivalent/cm2 (neq/cm2). The positioner portion of the system comprises a set of remotely controllable sample holders incorporating cooling and interfaces for sample power and readout, all constructed from low activation technologies. The monitoring component of the system samples the current or voltage of radiation tolerant silicon diodes placed directly in the path of the beam.