Amorphous-silicon thin-film transistor on soda-lime glass

— Amorphous-silicon (a-Si:H) thin-film transistors (TFTs) on soda-lime glass were fabricated by using a diffusion barrier and a low-temperature process at 200°C. The silicon nitride barrier was optimized in terms of diffusion blocking effectiveness, film adhesion, and surface finish. TFTs on soda-lime glass achieved a saturation mobility 0.47 cm2/V-sec, threshold voltage of 0 V, an off-current of 7.7×10−11 A, and a sub-threshold swing of 1.0 V/dec. From diffusion experiments, a 30,000-hour lifetime for the TFT device at 80°C was estimated, and the robustness of the silicon nitride barrier against long-term migration of sodium was demonstrated.