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Device Characteristics of AlGaN/GaN HEMTs with p-GaN Cap Layer
Device Characteristics of AlGaN/GaN HEMTs with p-GaN Cap Layer
2017
Chih-Hao Li
Yan-Cheng Jiang
Hsin-Chang Tsai
Yi-Nan Zhong
Yue-Ming Hsin
Keywords:
Analytical chemistry
Inorganic chemistry
Chemistry
Optoelectronics
algan gan
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