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Role of Oxygen Vacancies at the TiO 2 /HfO 2 Interface in Flexible Oxide‐Based Resistive Switching Memory
Role of Oxygen Vacancies at the TiO 2 /HfO 2 Interface in Flexible Oxide‐Based Resistive Switching Memory
2019
Rulin Zhang
Hong Huang
Qing Xia
Cong Ye
Xiaodi Wei
Jinzhao Wang
Li Zhang
Li Qiang Zhu
Keywords:
Oxygen
Oxide
Optoelectronics
Resistive touchscreen
Materials science
oxygen vacancy
Resistive random-access memory
resistive switching memory
resistive switching
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