Extremely thin SOI for system-on-chip applications

We review the basics of the extremely thin SOI (ETSOI) technology and how it addresses the main challenges of the CMOS scaling at the 20-nm technology node and beyond. The possibility of V T tuning with backbias, while keeping the channel undoped, opens up new opportunities that are unique to ETSOI. The main device characteristics with regard to low-power and high-performance logic, SRAM, analog and passive devices, and embedded memory are reviewed.